Silicon nitride wafers refer to silicon wafers with a silicon nitride layer on the surface. Silicon nitride is typically deposited on both sides of the silicon wafer via the LPCVD process, and can also be deposited on one side through the PECVD process.
Classified by the stress of the silicon nitride layer, they are divided into standard-stress silicon nitride wafers and low-stress silicon nitride wafers; the stress of low-stress silicon nitride wafers is approximately several tens of MPa.
Diameter: 2 to 8 inches;
Silicon wafer thickness: 200 ~ 1000μm;
Silicon nitride layer thickness: 20nm ~ 1μm;
Stress type: standard stress / low stress;
Deposition type: double-side silicon nitride layer / single-side silicon nitride layer.
Silicon nitride wafers are mainly used in high-temperature, high-power and high-frequency electronic devices, and are widely applied in wear-resistant and corrosion-resistant components for the photovoltaic (PV) industry, electric vehicle (EV) sector, industrial machinery and other fields.
The silicon nitride thin film deposited by Low Pressure Chemical Vapor Deposition (LPCVD) features double-side coverage. The silicon nitride layer fabricated by this process exhibits superior compactness and corrosion resistance, along with high film hardness and excellent masking performance, making it widely applicable as a masking layer for the etching of silicon materials in alkaline solutions.
In addition, PECVD enables single-side silicon nitride deposition with a processing capacity of only 1 wafer per run, while LPCVD for silicon nitride deposition can process 50 wafers per run, delivering higher production efficiency and greater cost-effectiveness.
