Silicon oxide wafers refer to silicon wafers with an oxide layer on the surface, where a SiO₂ thin film is typically grown on the silicon wafer surface via thermal oxidation or thin film deposition processes.
Wet oxide wafers, dry oxide wafers, LPCVD oxide wafers, PECVD single-side oxide wafers, etc.
Diameter: 2 to 12 inches;
Thickness: 200 to 1000μm;
Silicon substrate: single-side polished / double-side polished;
Crystal orientation: <100>, <110>, <111> and other orientations;
Conductivity type: N-type, P-type, intrinsic;
Resistivity: 0.001 Ω·cm and above;
Oxide layer thickness: 20nm ~ 15μm.
Integrated circuit (IC) field (capacitors, field-effect transistors (FETs), microelectronic components, etc.), Optoelectronics and optical communication field (fiber optic communication devices, lasers, etc.), Vacuum technology field, Biomedicine field (microfluidic devices, bio-MEMS, biochips, etc.).
Our company can supply silicon oxide wafers with high-quality film layers featuring uniform and dense oxide layers, high dielectric strength, smooth and defect-free surfaces, excellent flatness and low warpage. We maintain a ready inventory of silicon oxide wafers in various models, and can provide custom processing for oxide layers with a thickness of more than 2μm. We will recommend suitable models based on your process applications, with flexible procurement methods available.
