Electron-beam Lithography Resist

RE500 Series

Product Introduction:

Product Series:  RE500 Series, Negative Electron Beam Resist.

Recommended Light Source: E-beam.

Single-Layer Thickness: 105 nm, 590 nm, 1 μm.


Models:

RE500.06 / RE500.20


Applications:

RE500 is a negative electron beam resist based on hydrogen silsesquioxane (HSQ) cage oligomer, suitable for use as a mask in nanoscale dry etching processes.


Features:

 · High resolution (<20 nm) with low LWR.

 · Excellent etch resistance (based on siloxane resin).

 · Aqueous developer compatible.

 · Performance comparable to imported products XR1541 and the FOX series.

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  • RE500 Series
  • RE500 Series
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