Product Introduction:
RDNF-06-2523 Photoresist, negative tone.
Recommended Light Source: g/h/i-Line.
Single-Layer Thickness: 2.2–4 μm.
Applications:
RDNF-06-2523 Lift-off Photoresist is suitable for development with alkaline developers and formulated with safe solvents, boasting numerous advantages. It is a dedicated photoresist for fabricating metal electrodes or interconnects in microelectronic, microphotonics and micromechanical manufacturing processes.
Features:
● High Resolution: 3 μm in mass production, up to 2 μm for advanced processes.
● High Contrast: Excellent system crosslinking enables fast and clean development; Strong Adhesion: HMDS-free, no undercutting.
● High Process Latitude: Insensitive to minor fluctuations in ED and PEB within a certain range, ensuring high mass production stability; Easy Stripping: Soluble in organic solvents, enabling fast and residue-free removal.
● Regular Metallic Profile: Near-rectangular metal morphology after gold evaporation.
