Process Introduction：
1、Ion Implantation Energy: 10 keV ~ 1 MeV (for monovalent ions);
2、Ion Implantation Dose: 1E11 ~ 1E15 ions/cm². Processability of doses above 1E15 ions/cm² shall be determined according to specific process parameters; high-dose implantation is recommended to be performed with high-beam-current equipment;
3、Samples: Compatible with conventional substrates of 6 inches or below; Minimum Substrate Size: 10×10 mm;
4、Available Implantation Elements: Boron (B), Phosphorus (P), Nitrogen (N), Silicon (Si) and other elements are currently available for ion implantation.
