Process Introduction:
Deep Silicon Etching (DRIE): Etches silicon materials to form high-aspect-ratio structures, process gases include SF6, C4F8, etc.
Ion Beam Etching (IBE): Pure physical etching for metals and dielectric layers, process gas is Ar.
Reactive Ion Etching (RIE) & Inductively Coupled Plasma Etching (ICP): Etches dielectric layers and Ⅲ-V group materials.
Neutral Loop Discharge Etcher (NLD): Deep etching for quartz, silicon oxide and silicon carbide, process gases include CF4, SF6, etc.
