Model:
ZX-238
Main Component:
Tetramethylammonium Hydroxide (TMAH) 2.38%
CAS 75-59-2
Principle and Application Method:
It takes advantage of the chemical property difference between the exposed and unexposed areas of positive photoresist. The dissolution rate of the exposed photoresist film in the weakly alkaline solution increases by two to three orders of magnitude, enabling its rapid dissolution, while the unexposed areas remain intact due to an extremely low dissolution rate.
According to the different contact modes of the developer with the substrate, the development methods are divided into immersion development, spin spray development and soak development, which can be selected based on factors such as photoresist thickness. The optimal development time depends on the photoresist type, film thickness, exposure wavelength, baking temperature and development process. For photoresist with a film thickness of less than 2μm, the development time shall not exceed 2 minutes (e.g., the time range for immersion or agitated development is 20-60 seconds, and shall not exceed 120 seconds). For photoresist with a film thickness over 10μm, the development time requires 2-10 minutes; for a film thickness of 100μm, the development time exceeds 60 minutes. A more intensive spray development method requires a shorter time.
Storage:
Store in a cool and well-ventilated warehouse;
Keep away from ignition sources and heat sources;
Prevent direct sunlight exposure;
Keep the container sealed;
Store separately from acids, metal powders and other incompatible substances.
